Zenode.ai Logo
Beta
K
IPP027N08N5AKSA1 - TO-220-3

IPP027N08N5AKSA1

Unknown
Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; TO-220 PACKAGE; 2.7 MOHM;

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
IPP027N08N5AKSA1 - TO-220-3

IPP027N08N5AKSA1

Unknown
Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; TO-220 PACKAGE; 2.7 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP027N08N5AKSA1
Current - Continuous Drain (Id) @ 25°C120 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]123 nC
Input Capacitance (Ciss) (Max) @ Vds8970 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)214 W
Rds On (Max) @ Id, Vgs2.7 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 4.44
10$ 2.93
100$ 2.08

Description

General part information

IPP027 Series

OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification fortelecomandserver power supplies. In addition, the device can also be utilized in other industrial applications such assolar,low voltage drivesandadapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on)reduction of up to 43%.

Documents

Technical documentation and resources