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OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; TO-220 PACKAGE; 2.7 MOHM;
| Part | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | FET Type | Mounting Type | Supplier Device Package | Rds On (Max) @ Id, Vgs | Package / Case | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | 6 V 10 V | 3.8 V | -55 °C | 175 ░C | 214 W | 80 V | 20 V | 123 nC | 120 A | N-Channel | Through Hole | PG-TO220-3 | 2.7 mOhm | TO-220-3 | 8970 pF |