
MJD122-1
ActiveSTMicroelectronics
BIPOLAR ARRAY, NPN, 8A, 20W, IPAK ROHS COMPLIANT: YES
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MJD122-1
ActiveSTMicroelectronics
BIPOLAR ARRAY, NPN, 8A, 20W, IPAK ROHS COMPLIANT: YES
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | MJD122-1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 8 A |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 hFE |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | IPAK, TO-251-3 Short Leads, TO-251AA |
| Power - Max [Max] | 20 W |
| Supplier Device Package | TO-251 (IPAK) |
| Vce Saturation (Max) @ Ib, Ic | 4 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
MJD122 Series
The devices are manufactured in planar technology with base island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage."Low collector-emitter saturation voltageIntegrated antiparallel collector-emitter diode
Documents
Technical documentation and resources