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MJD122T4 - STMICROELECTRONICS MJD122T4

MJD122T4

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STMicroelectronics

DARLINGTON TRANSISTOR, DARLINGTON, NPN, 3 PINS

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MJD122T4 - STMICROELECTRONICS MJD122T4

MJD122T4

Active
STMicroelectronics

DARLINGTON TRANSISTOR, DARLINGTON, NPN, 3 PINS

Technical Specifications

Parameters and characteristics for this part

SpecificationMJD122T4
Current - Collector (Ic) (Max) [Max]8 A
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 hFE
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]20 W
Supplier Device PackageDPAK
Vce Saturation (Max) @ Ib, Ic4 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.23
10$ 0.77
100$ 0.51
500$ 0.39
1000$ 0.36
Digi-Reel® 1$ 1.23
10$ 0.77
100$ 0.51
500$ 0.39
1000$ 0.36
Tape & Reel (TR) 2500$ 0.32
5000$ 0.29
7500$ 0.28
12500$ 0.27
17500$ 0.27

Description

General part information

MJD122 Series

The devices are manufactured in planar technology with "base island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.