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IRF6785MTRPBF - IRF6614TR1PBF

IRF6785MTRPBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 100 MOHM;

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IRF6785MTRPBF - IRF6614TR1PBF

IRF6785MTRPBF

Active
Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 100 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF6785MTRPBF
Current - Continuous Drain (Id) @ 25°C19 A, 3.4 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs36 nC
Input Capacitance (Ciss) (Max) @ Vds1500 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseDirectFET™ Isometric MZ
Power Dissipation (Max)2.8 W, 57 W
Rds On (Max) @ Id, Vgs100 mOhm
Supplier Device PackageDIRECTFET™ MZ
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.51
Digi-Reel® 1$ 3.51
Tape & Reel (TR) 4800$ 1.12
NewarkEach (Supplied on Cut Tape) 1$ 3.02
10$ 2.54
25$ 2.51
50$ 2.46
100$ 2.43
250$ 2.40
500$ 2.35
1000$ 2.16

Description

General part information

IRF6785 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.