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IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 100 MOHM;
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Power Dissipation (Max) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Technology | Supplier Device Package | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drain to Source Voltage (Vdss) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 150 °C | -40 °C | DirectFET™ Isometric MZ | 2.8 W 57 W | Surface Mount | 10 V | 3.4 A 19 A | MOSFET (Metal Oxide) | DIRECTFET™ MZ | 100 mOhm | 5 V | 36 nC | 1500 pF | 20 V | 200 V | N-Channel |