IRF7530PBF

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Infineon Technologies

MOSFET 2N-CH 20V 5.4A MICRO8

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Infineon Technologies

MOSFET 2N-CH 20V 5.4A MICRO8

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7530PBF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	5.4 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs [Max]	26 nC
Input Capacitance (Ciss) (Max) @ Vds	1310 pF
Mounting Type	Surface Mount
Package / Case	8-MSOP, 8-TSSOP
Package / Case	3 mm
Package / Case [custom]	0.118 in
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	Micro8™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2 V

Part	Mounting Type	Configuration	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Package / Case	Package / Case [custom]	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
Infineon Technologies IRF7530TRPBF	Surface Mount	2 N-Channel (Dual)	5.4 A	Micro8™	-55 °C	150 °C	MOSFET (Metal Oxide)	8-MSOP 8-TSSOP	0.118 in	3 mm	1.2 V	30 mOhm	26 nC	1310 pF	20 V
Infineon Technologies IRF7530PBF	Surface Mount	2 N-Channel (Dual)	5.4 A	Micro8™			MOSFET (Metal Oxide)	8-MSOP 8-TSSOP	0.118 in	3 mm	1.2 V	30 mOhm	26 nC	1310 pF	20 V
Infineon Technologies IRF7530TR	Surface Mount	2 N-Channel (Dual)	5.4 A	Micro8™	-55 °C	150 °C	MOSFET (Metal Oxide)	8-MSOP 8-TSSOP	0.118 in	3 mm	1.2 V	30 mOhm	26 nC	1310 pF	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$