IRF7530TRPBF
LTBIR MOSFET™ N+N DUAL SMALL POWER ; MICRO8 MO-187 PACKAGE; 30 MOHM;
Deep-Dive with AI
Search across all available documentation for this part.
IRF7530TRPBF
LTBIR MOSFET™ N+N DUAL SMALL POWER ; MICRO8 MO-187 PACKAGE; 30 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF7530TRPBF |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 5.4 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 26 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1310 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-MSOP, 8-TSSOP |
| Package / Case | 3 mm |
| Package / Case [custom] | 0.118 in |
| Rds On (Max) @ Id, Vgs | 30 mOhm |
| Supplier Device Package | Micro8™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IRF7530 Series
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.