IPI50N12S3L15AKSA1

Obsolete

Infineon Technologies

MOSFET N-CHANNEL_100+

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N-CHANNEL_100+

Technical Specifications

Parameters and characteristics for this part

Specification	IPI50N12S3L15AKSA1

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	120 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	57 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	4180 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	100 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	15.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Qualification	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Grade	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type
Infineon Technologies IPI50N12S3L15AKSA1	MOSFET (Metal Oxide)	57 nC	120 V	AEC-Q101	2.4 V	15.7 mOhm	Automotive	20 V	-55 °C	175 ░C	N-Channel	100 W	4180 pF	4.5 V 10 V	50 A	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	360	$ 0.84

General part information

N-Channel 120 V 50A (Tc) 100W (Tc) Through Hole PG-TO262-3-1

Technical documentation and resources