Beta
⌘K
MOSFET N-CHANNEL_100+
| Part | Technology | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Qualification | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Grade | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | 57 nC | 120 V | AEC-Q101 | 2.4 V | 15.7 mOhm | Automotive | 20 V | -55 °C | 175 ░C | N-Channel | 100 W | 4180 pF | 4.5 V 10 V | 50 A | I2PAK TO-262-3 Long Leads TO-262AA | Through Hole |