Specification | Value |
---|---|
Channel Type | Independent |
Driven Configuration | Half-Bridge |
Gate Type | N-Channel MOSFET |
Grade | Automotive |
High Side Voltage - Max (Bootstrap) [Max] | 120 V |
Input Type | Non-Inverting |
Logic Voltage - VIL, VIH | 1.2999999523162842 V, 2.4000000953674316 V |
Mounting Type | Surface Mount |
Number of Drivers | 2 |
Operating Temperature [Max] | 125 °C |
Operating Temperature [Min] | -40 °C |
Package / Case | 3.9000000953674316 mm |
Package / Case | 8-SOIC |
Qualification | AEC-Q100 |
Rise / Fall Time (Typ) | 12 ns, 10 ns |
Supplier Device Package | 8-SOIC |
Voltage - Supply [Max] | 16 V |
Voltage - Supply [Min] | 5.5 V |
Specification | Value |
---|---|
Channel Type | Independent |
Driven Configuration | Half-Bridge |
Gate Type | N-Channel MOSFET |
Grade | Automotive |
High Side Voltage - Max (Bootstrap) [Max] | 120 V |
Input Type | Non-Inverting |
Logic Voltage - VIL, VIH | 1.2999999523162842 V, 2.4000000953674316 V |
Mounting Type | Surface Mount |
Number of Drivers | 2 |
Operating Temperature [Max] | 125 °C |
Operating Temperature [Min] | -40 °C |
Package / Case | 3.9000000953674316 mm |
Package / Case | 8-SOIC |
Qualification | AEC-Q100 |
Rise / Fall Time (Typ) | 12 ns, 10 ns |
Supplier Device Package | 8-SOIC |
Voltage - Supply [Max] | 16 V |
Voltage - Supply [Min] | 5.5 V |