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AIDK08S65C5ATMA1 - AIDK08S65C5ATMA1

AIDK08S65C5ATMA1

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Infineon Technologies

THE 5TH GENERATION COOLSIC™ AUTOMOTIVE SCHOTTKY DIODE AND REPRESENTS INFINEON LEADING EDGE TECHNOLOGY FOR SILICON CARBIDE SCHOTTKY BARRIER DIODES

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AIDK08S65C5ATMA1 - AIDK08S65C5ATMA1

AIDK08S65C5ATMA1

Active
Infineon Technologies

THE 5TH GENERATION COOLSIC™ AUTOMOTIVE SCHOTTKY DIODE AND REPRESENTS INFINEON LEADING EDGE TECHNOLOGY FOR SILICON CARBIDE SCHOTTKY BARRIER DIODES

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationAIDK08S65C5ATMA1
Capacitance @ Vr, F248 pF
Current - Average Rectified (Io)8 A
Current - Reverse Leakage @ Vr50 µA
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-40 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
QualificationAEC-Q101
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Supplier Device PackagePG-TO263-2
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]650 V
Voltage - Forward (Vf) (Max) @ If1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 5.26
10$ 4.41
100$ 3.57
500$ 3.17
Digi-Reel® 1$ 5.26
10$ 4.41
100$ 3.57
500$ 3.17
Tape & Reel (TR) 1000$ 2.46
NewarkEach (Supplied on Cut Tape) 1$ 4.37
10$ 3.30
25$ 3.05
50$ 2.81
100$ 2.56
250$ 2.56
500$ 2.55
1000$ 2.55

Description

General part information

AIDK08 Series

Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermalcharacteristics and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements inthe 650V voltage class.

Documents

Technical documentation and resources