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THE 5TH GENERATION COOLSIC™ AUTOMOTIVE SCHOTTKY DIODE AND REPRESENTS INFINEON LEADING EDGE TECHNOLOGY FOR SILICON CARBIDE SCHOTTKY BARRIER DIODES
| Part | Qualification | Grade | Package / Case | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Mounting Type | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Reverse Recovery Time (trr) | Capacitance @ Vr, F | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | AEC-Q101 | Automotive | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | PG-TO263-2 | 650 V | No Recovery Time | 8 A | 1.7 V | 50 µA | Surface Mount | -40 °C | 175 ░C | 0 ns | 248 pF | SiC (Silicon Carbide) Schottky |