GP3D010A120B

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SemiQ

DIODE SIL CARB 1.2KV 10A TO247-2

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SemiQ

DIODE SIL CARB 1.2KV 10A TO247-2

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	GP3D010A120B	GP3D010 Series

Capacitance @ Vr, F	608 pF	419 - 608 pF
Current - Average Rectified (Io)	10 A	10 A
Current - Reverse Leakage @ Vr	20 µA	20 - 25 µA
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction [Max]	175 ░C	175 ░C
Operating Temperature - Junction [Min]	-55 C	-55 C
Package / Case	TO-247-2	TO-220-2, TO-247-2
Reverse Recovery Time (trr)	0 ns	0 ns
Speed	No Recovery Time	No Recovery Time
Supplier Device Package	TO-247-2	TO-220-2, TO-247-2
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV	1.2 - 650 V
Voltage - Forward (Vf) (Max) @ If	1.65 V	1.6 - 1.65 V

DIODE SIL CARB 650V 10A TO220-2

Part	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Package / Case	Capacitance @ Vr, F	Speed	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Technology	Reverse Recovery Time (trr)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]
SemiQ GP3D010A065A	1.6 V	25 µA	TO-220-2	419 pF	No Recovery Time	Through Hole	175 ░C	-55 C	10 A	SiC (Silicon Carbide) Schottky	0 ns	TO-220-2	650 V
SemiQ GP3D010A120B	1.65 V	20 µA	TO-247-2	608 pF	No Recovery Time	Through Hole	175 ░C	-55 C	10 A	SiC (Silicon Carbide) Schottky	0 ns	TO-247-2	1.2 kV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	30	$ 4.71

General part information

Diode 1200 V 10A Through Hole TO-247-2

Technical documentation and resources