DIODE SIL CARB 650V 10A TO220-2
| Part | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Package / Case | Capacitance @ Vr, F | Speed | Mounting Type | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Average Rectified (Io) | Technology | Reverse Recovery Time (trr) | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SemiQ GP3D010A065A | 1.6 V | 25 µA | TO-220-2 | 419 pF | No Recovery Time | Through Hole | 175 ░C | -55 C | 10 A | SiC (Silicon Carbide) Schottky | 0 ns | TO-220-2 | 650 V |
SemiQ GP3D010A120B | 1.65 V | 20 µA | TO-247-2 | 608 pF | No Recovery Time | Through Hole | 175 ░C | -55 C | 10 A | SiC (Silicon Carbide) Schottky | 0 ns | TO-247-2 | 1.2 kV |