
DMTH15H017LPSWQ-13
ActiveDiodes Inc
TRANS MOSFET N-CH 150V 8A 8-PIN POWERDI EP T/R AUTOMOTIVE AEC-Q101
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DMTH15H017LPSWQ-13
ActiveDiodes Inc
TRANS MOSFET N-CH 150V 8A 8-PIN POWERDI EP T/R AUTOMOTIVE AEC-Q101
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH15H017LPSWQ-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50 A, 8 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 50 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 3369 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 107 W, 1.5 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 17.5 mOhm |
| Supplier Device Package | PowerDI5060-8 (Type UX) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DMTH15H017LPSWQ Series
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.
Documents
Technical documentation and resources