Catalog
150V +175°C N-Channel Enhancement Mode MOSFET
Key Features
• Rated to +175°C – Ideal for High Ambient Temperature Environments
• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
• Thermally Efficient Package-Cooler Running Applications
• High Conversion Efficiency
• Low RDS(ON) – Minimizes On-State Losses
• Low Input Capacitance
• Fast Switching Speed
• <1.1mm Package Profile – Ideal for Thin Applications (PowerDI®)
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. "Green" Device (Note 3)
• The DIODES™ DMTH15H017LPSWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/
Description
AI
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.