Specification	SSM6L36TU,LF

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Ta)	500 mA
Current - Continuous Drain (Id) (Ta) (2)	330 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
FET Feature Drive Voltage	1.5 V
Gate Charge (Max)	1.2 nC, 1.23 nC
Input Capacitance (Ciss) (Max)	43 pF, 46 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	Flat Leads, 6-SMD
Package Name	UF6
Power - Max (Ta)	500 mW
Rds On (Max)	630 mOhm, 1.31 Ohm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1 V

SSM6L36TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.5 A/-0.33 A, 0.66 Ω@4.5V/1.31 Ω@4.5V, SOT-363F(UF6)

Part	Operating Temperature	Configuration	Gate Charge (Max)	Rds On (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Technology	Package Name	Package / Case	Drain to Source Voltage (Vdss)	FET Feature	FET Feature Drive Voltage	Power - Max (Ta)	Current - Continuous Drain (Id) (Ta) (2)	Current - Continuous Drain (Id) (Ta)
Toshiba Semiconductor and Storage SSM6L36TU,LF	150 °C	N P-Channel	1.2 nC 1.23 nC	1.31 Ohm 630 mOhm	Surface Mount	43 pF 46 pF	1 V	MOSFET (Metal Oxide)	UF6	6-SMD Flat Leads	20 V	Logic Level Gate	1.5 V	500 mW	330 mA	500 mA

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