SSM6L36TU,LF

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Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.5A UF6

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Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.5A UF6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6L36TU,LF

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	330 mA, 500 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
FET Feature	1.5 V
Gate Charge (Qg) (Max) @ Vgs	1.23 nC
Gate Charge (Qg) (Max) @ Vgs	1.2 nC
Input Capacitance (Ciss) (Max) @ Vds	46 pF, 43 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs	1.31 Ohm, 630 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Technology	Supplier Device Package	Configuration	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	FET Feature	FET Feature	Drain to Source Voltage (Vdss)	Power - Max [Max]
Toshiba Semiconductor and Storage SSM6L36TU,LF	MOSFET (Metal Oxide)	UF6	N and P-Channel	1 V	1.31 Ohm 630 mOhm	Surface Mount	1.23 nC	1.2 nC	330 mA 500 mA	6-SMD Flat Leads	43 pF 46 pF	150 °C	Logic Level Gate	1.5 V	20 V	500 mW

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General part information

Mosfet Array 20V 500mA (Ta), 330mA (Ta) 500mW (Ta) Surface Mount UF6

Technical documentation and resources

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