MOSFET N/P-CH 20V 0.5A UF6
| Part | Technology | Supplier Device Package | Configuration | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature | FET Feature | FET Feature | Drain to Source Voltage (Vdss) | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | UF6 | N and P-Channel | 1 V | 1.31 Ohm 630 mOhm | Surface Mount | 1.23 nC | 1.2 nC | 330 mA 500 mA | 6-SMD Flat Leads | 43 pF 46 pF | 150 °C | Logic Level Gate | 1.5 V | 20 V | 500 mW |