SSM6L13TU(T5L,F,T)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 800MA UF6

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 800MA UF6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6L13TU(T5L,F,T)

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	800 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	1.8 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds	268 pF, 250 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs	143 mOhm, 234 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Configuration	FET Feature	FET Feature	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature	Technology	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Toshiba Semiconductor and Storage SSM6L13TU(T5L,F,T)	20 V	6-SMD Flat Leads	143 mOhm 234 mOhm	N and P-Channel	1.8 V	Logic Level Gate	1 V	250 pF 268 pF	Surface Mount	150 °C	MOSFET (Metal Oxide)	500 mW	800 mA	UF6

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 800mA (Ta) 500mW Surface Mount UF6

Technical documentation and resources