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MOSFET N/P-CH 20V 800MA UF6
| Part | Drain to Source Voltage (Vdss) | Package / Case | Rds On (Max) @ Id, Vgs | Configuration | FET Feature | FET Feature | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature | Technology | Power - Max [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 20 V | 6-SMD Flat Leads | 143 mOhm 234 mOhm | N and P-Channel | 1.8 V | Logic Level Gate | 1 V | 250 pF 268 pF | Surface Mount | 150 °C | MOSFET (Metal Oxide) | 500 mW | 800 mA | UF6 |