IXTU2N80P

Obsolete

IXYS

MOSFET N-CH 800V 2A TO251

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET N-CH 800V 2A TO251

Technical Specifications

Parameters and characteristics for this part

Specification	IXTU2N80P

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10.6 nC
Input Capacitance (Ciss) (Max) @ Vds	440 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	70 W
Rds On (Max) @ Id, Vgs	6 Ohm
Supplier Device Package	TO-251AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case
IXYS IXTU2N80P	TO-251AA	800 V	MOSFET (Metal Oxide)	440 pF	10 V	70 W	Through Hole	6 Ohm	2 A	30 V	5.5 V	N-Channel	-55 °C	150 °C	10.6 nC	IPAK TO-251-3 Short Leads TO-251AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 2A (Tc) 70W (Tc) Through Hole TO-251AA

Technical documentation and resources

No documents available