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MOSFET N-CH 800V 2A TO251
| Part | Supplier Device Package | Drain to Source Voltage (Vdss) | Technology | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Mounting Type | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Vgs(th) (Max) @ Id | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | TO-251AA | 800 V | MOSFET (Metal Oxide) | 440 pF | 10 V | 70 W | Through Hole | 6 Ohm | 2 A | 30 V | 5.5 V | N-Channel | -55 °C | 150 °C | 10.6 nC | IPAK TO-251-3 Short Leads TO-251AA |