DSS4160FDB-7

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Diodes Inc

TRANS GP BJT NPN 60V 1A 2470MW 6-PIN UDFN EP T/R

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Diodes Inc

TRANS GP BJT NPN 60V 1A 2470MW 6-PIN UDFN EP T/R

Technical Specifications

Parameters and characteristics for this part

Specification	DSS4160FDB-7

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	150
Frequency - Transition	175 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power - Max [Max]	405 mW
Supplier Device Package	U-DFN2020-6 (Type B)
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	240 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

Dual NPN, 60V, 1A, DFN2020-6

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Frequency - Transition	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Package / Case	Transistor Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
Diodes Inc DSS4160T-7	200	-55 °C	150 °C	SOT-23-3	150 MHz	Surface Mount	60 V	1 A	280 mV	100 nA	SC-59 SOT-23-3 TO-236-3	NPN	725 mW
Diodes Inc DSS4160FDB-7	150	-55 °C	150 °C	U-DFN2020-6 (Type B)	175 MHz	Surface Mount		1 A	240 mV	100 nA	6-UDFN Exposed Pad	2 NPN (Dual)	405 mW	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

60V LOW VCE(SAT)NPN SURFACE MOUNT TRANSISTOR

Technical documentation and resources