DSS4160FDB Series

Dual NPN, 60V, 1A, DFN2020-6

Catalog

Dual NPN, 60V, 1A, DFN2020-6

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Frequency - Transition	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Package / Case	Transistor Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
Diodes Inc DSS4160T-7	200	-55 °C	150 °C	SOT-23-3	150 MHz	Surface Mount	60 V	1 A	280 mV	100 nA	SC-59 SOT-23-3 TO-236-3	NPN	725 mW
Diodes Inc DSS4160FDB-7	150	-55 °C	150 °C	U-DFN2020-6 (Type B)	175 MHz	Surface Mount		1 A	240 mV	100 nA	6-UDFN Exposed Pad	2 NPN (Dual)	405 mW	60 V

Dual NPN, 60V, 1A, DFN2020-6

• BVCEO> 60V

• IC= 1A high Continuous Collector Current

• RCE(sat)= 180mΩ for a Low Equivalent On-Resistance

• Low Saturation Voltage VCE(sat)< 220mV @ 1A

• PDup to 2.47W for power demanding applications

• RθJAefficient, 40% lower than SOT26

• Low profile 0.6mm high package for thin applications

60V LOW VCE(SAT)NPN SURFACE MOUNT TRANSISTOR