IRL540NSTRLPBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 44 MOHM;

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 44 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRL540NSTRLPBF

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	74 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	140 W, 3.8 W
Rds On (Max) @ Id, Vgs [Max]	44 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2 V

Part	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IRL540NSTRLPBF	MOSFET (Metal Oxide)	2 V	D2PAK	100 V	Surface Mount	N-Channel	36 A	4 V	10 V	-55 °C	175 ░C	3.8 W 140 W	1800 pF	44 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	16 V	74 nC
Infineon Technologies IRL540NPBF	MOSFET (Metal Oxide)	2 V	TO-220AB	100 V	Through Hole	N-Channel	36 A	4 V	10 V	-55 °C	175 ░C	140 W	1800 pF	44 mOhm	TO-220-3	16 V	74 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 36A (Tc) 3.8W (Ta), 140W (Tc) Surface Mount D2PAK

Technical documentation and resources