IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 44 MOHM;
| Part | Technology | Vgs(th) (Max) @ Id | Supplier Device Package | Drain to Source Voltage (Vdss) | Mounting Type | FET Type | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs [Max] | Package / Case | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | 2 V | D2PAK | 100 V | Surface Mount | N-Channel | 36 A | 4 V | 10 V | -55 °C | 175 ░C | 3.8 W 140 W | 1800 pF | 44 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 16 V | 74 nC |
Infineon Technologies | MOSFET (Metal Oxide) | 2 V | TO-220AB | 100 V | Through Hole | N-Channel | 36 A | 4 V | 10 V | -55 °C | 175 ░C | 140 W | 1800 pF | 44 mOhm | TO-220-3 | 16 V | 74 nC |