STGP19NC60H

Obsolete

STMicroelectronics

IGBT 600V 40A 130W TO220

Search across all available documentation for this part.

Obsolete

STMicroelectronics

IGBT 600V 40A 130W TO220

Technical Specifications

Parameters and characteristics for this part

Specification	STGP19NC60H

Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Pulsed (Icm)	60 A
Gate Charge	53 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	130 W
Supplier Device Package	TO-220
Switching Energy	85 µJ, 189 µJ
Td (on/off) @ 25°C	97 ns, 25 ns
Test Condition	12 A, 15 V, 390 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

20 A, 600 V fast IGBT with Ultrafast diode

Part	Switching Energy	Power - Max [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Td (on/off) @ 25°C	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Test Condition	Current - Collector Pulsed (Icm)	Mounting Type	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Gate Charge	Reverse Recovery Time (trr)	Td (on/off) @ 25°C
STMicroelectronics STGP19NC60H	85 µJ 189 µJ	130 W	TO-220-3	-55 °C	150 °C	25 ns 97 ns	TO-220	600 V	10 Ohm 12 A 15 V 390 V	60 A	Through Hole	40 A	2.5 V	53 nC
STMicroelectronics STGP19NC60SD	135 µJ 815 µJ	130 W	TO-220-3	-55 °C	150 °C		TO-220	600 V	10 Ohm 12 A 15 V 480 V	80 A	Through Hole	40 A	1.9 V	54.5 nC	31 ns	17.5 ns 175 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Technical documentation and resources

No documents available