Catalog
20 A, 600 V fast IGBT with Ultrafast diode
Description
AI
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Beta
⌘K
20 A, 600 V fast IGBT with Ultrafast diode
20 A, 600 V fast IGBT with Ultrafast diode
| Part | Switching Energy | Power - Max [Max] | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Td (on/off) @ 25°C | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) [Max] | Test Condition | Current - Collector Pulsed (Icm) | Mounting Type | Current - Collector (Ic) (Max) [Max] | Vce(on) (Max) @ Vge, Ic | Gate Charge | Reverse Recovery Time (trr) | Td (on/off) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 85 µJ 189 µJ | 130 W | TO-220-3 | -55 °C | 150 °C | 25 ns 97 ns | TO-220 | 600 V | 10 Ohm 12 A 15 V 390 V | 60 A | Through Hole | 40 A | 2.5 V | 53 nC | ||
STMicroelectronics | 135 µJ 815 µJ | 130 W | TO-220-3 | -55 °C | 150 °C | TO-220 | 600 V | 10 Ohm 12 A 15 V 480 V | 80 A | Through Hole | 40 A | 1.9 V | 54.5 nC | 31 ns | 17.5 ns 175 ns |