IXFQ24N50P2

Obsolete

IXYS

MOSFET N-CH 500V 24A TO3P

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Obsolete

IXYS

MOSFET N-CH 500V 24A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	IXFQ24N50P2

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	480 W
Rds On (Max) @ Id, Vgs [Max]	270 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]
IXYS IXFQ24N50P2	500 V	4.5 V	N-Channel	SC-65-3 TO-3P-3	TO-3P	480 W	MOSFET (Metal Oxide)	10 V	30 V	270 mOhm	48 nC	Through Hole	24 A	-55 °C	150 °C
IXYS IXFQ24N60X	600 V	4.5 V	N-Channel	SC-65-3 TO-3P-3	TO-3P		MOSFET (Metal Oxide)	10 V	30 V			Through Hole	24 A	-55 °C	150 °C	175 mOhm	1910 pF	400 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 24A (Tc) 480W (Tc) Through Hole TO-3P

Technical documentation and resources

No documents available