MOSFET N-CH 500V 24A TO3P
| Part | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | FET Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 500 V | 4.5 V | N-Channel | SC-65-3 TO-3P-3 | TO-3P | 480 W | MOSFET (Metal Oxide) | 10 V | 30 V | 270 mOhm | 48 nC | Through Hole | 24 A | -55 °C | 150 °C | |||
IXYS | 600 V | 4.5 V | N-Channel | SC-65-3 TO-3P-3 | TO-3P | MOSFET (Metal Oxide) | 10 V | 30 V | Through Hole | 24 A | -55 °C | 150 °C | 175 mOhm | 1910 pF | 400 W |