TJ80S04M3L(T6L1,NQ

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Toshiba Semiconductor and Storage

MOSFET P-CH 40V 80A DPAK

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Toshiba Semiconductor and Storage

MOSFET P-CH 40V 80A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TJ80S04M3L(T6L1,NQ

Current - Continuous Drain (Id) @ 25°C	80 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	158 nC
Input Capacitance (Ciss) (Max) @ Vds	7770 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs	5.2 mOhm
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	3 V

Part	Rds On (Max) @ Id, Vgs	Vgs (Max) [Min]	Vgs (Max) [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
Toshiba Semiconductor and Storage TJ80S04M3L(T6L1,NQ	5.2 mOhm	-20 V	10 V	P-Channel	158 nC	175 °C	DPAK+	80 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	6 V 10 V	40 V	3 V	100 W	MOSFET (Metal Oxide)	7770 pF	Surface Mount

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General part information

P-Channel 40 V 80A (Ta) 100W (Tc) Surface Mount DPAK+

Technical documentation and resources