MOSFET P-CH 40V 80A DPAK
| Part | Rds On (Max) @ Id, Vgs | Vgs (Max) [Min] | Vgs (Max) [Max] | FET Type | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Technology | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 5.2 mOhm | -20 V | 10 V | P-Channel | 158 nC | 175 °C | DPAK+ | 80 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 6 V 10 V | 40 V | 3 V | 100 W | MOSFET (Metal Oxide) | 7770 pF | Surface Mount |