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RN1964TE85LF - US6-SSM6N

RN1964TE85LF

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Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

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RN1964TE85LF - US6-SSM6N

RN1964TE85LF

Active
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationRN1964TE85LF
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]80
Frequency - Transition250 MHz
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max [Max]200 mW
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)47000 Ohms
Supplier Device PackageUS6
Transistor Type2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.33
10$ 0.23
100$ 0.12
500$ 0.09
1000$ 0.07
Digi-Reel® 1$ 0.33
10$ 0.23
100$ 0.12
500$ 0.09
1000$ 0.07
Tape & Reel (TR) 3000$ 0.04
6000$ 0.04
9000$ 0.04

Description

General part information

RN1964 Series

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6

Documents

Technical documentation and resources