Beta
⌘K
TRANS 2NPN PREBIAS 0.2W US6
| Part | Voltage - Collector Emitter Breakdown (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | Frequency - Transition | Supplier Device Package | Mounting Type | Resistor - Base (R1) | Package / Case | Transistor Type | Current - Collector (Ic) (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Resistor - Emitter Base (R2) | Current - Collector Cutoff (Max) [Max] | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 50 V | 300 mV | 250 MHz | US6 | Surface Mount | 47 kOhms | 6-TSSOP SC-88 SOT-363 | 2 NPN - Pre-Biased (Dual) | 100 mA | 80 | 47000 Ohms | 100 nA | 200 mW |