SCT040W120G3-4AG

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STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 1200 V, 40 MOHM TYP., 40 A IN AN HIP247-4 PACKAGE

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SCT040W120G3-4AG

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STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 1200 V, 40 MOHM TYP., 40 A IN AN HIP247-4 PACKAGE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT040W120G3-4AG

Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1329 pF
Mounting Type	Through Hole
Operating Temperature [Max]	200 C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	312 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	54 mOhm
Supplier Device Package	TO-247-4
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	4.2 V

SCT040W120G3-4AG Series

Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package

Part	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max)	Supplier Device Package	Package / Case	Qualification	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Vgs (Max) [Min]	Vgs (Max) [Max]
STMicroelectronics SCT040W120G3-4AG	Automotive	-55 °C	200 C	15 V 18 V	1329 pF	1200 V	Through Hole	56 nC	N-Channel	312 W	TO-247-4	TO-247-4	AEC-Q101	4.2 V	54 mOhm	-10 V	22 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 18.33
		10	$ 15.01
		100	$ 13.30
Newark	Each	1	$ 24.34
		10	$ 22.17
		25	$ 21.74
		60	$ 20.87
		120	$ 20.00
		270	$ 19.57

Description

General part information