SCT040W120G3-4AG Series

Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package

Catalog

Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package

Part	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max)	Supplier Device Package	Package / Case	Qualification	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Vgs (Max) [Min]	Vgs (Max) [Max]
STMicroelectronics SCT040W120G3-4AG	Automotive	-55 °C	200 C	15 V 18 V	1329 pF	1200 V	Through Hole	56 nC	N-Channel	312 W	TO-247-4	TO-247-4	AEC-Q101	4.2 V	54 mOhm	-10 V	22 V

Catalog

Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.