CSD17306Q5A

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Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 4.2 MOHM

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Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 4.2 MOHM

Technical Specifications

Parameters and characteristics for this part

Specification	CSD17306Q5A

Current - Continuous Drain (Id) @ 25°C	100 A, 24 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	3 V, 8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2170 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	3.2 W
Rds On (Max) @ Id, Vgs	3.7 mOhm
Supplier Device Package	8-VSONP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V, -8 V
Vgs(th) (Max) @ Id	1.6 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.2 mOhm

Part	Mounting Type	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max) [Max]
Texas Instruments CSD17306Q5A	Surface Mount	8-VSONP (5x6)	MOSFET (Metal Oxide)	24 A, 100 A	1.6 V	3.7 mOhm	3 V, 8 V	15.3 nC	N-Channel	2170 pF	-8 V, 10 V	30 V	8-PowerTDFN	150 °C	-55 °C	3.2 W

General part information

The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.

Technical documentation and resources