SPW11N60CFDFKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 650V 11A TO247-3

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Obsolete

Infineon Technologies

MOSFET N-CH 650V 11A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPW11N60CFDFKSA1

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	64 nC
Input Capacitance (Ciss) (Max) @ Vds	1200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	440 mOhm
Supplier Device Package	PG-TO247-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	FET Type	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id
Infineon Technologies SPW11N60CFDFKSA1	440 mOhm	MOSFET (Metal Oxide)	64 nC	Through Hole	650 V	1200 pF	-55 °C	150 °C	10 V	PG-TO247-3-1	11 A	125 W	N-Channel	TO-247-3	20 V	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 11A (Tc) 125W (Tc) Through Hole PG-TO247-3-1

Technical documentation and resources

No documents available