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MOSFET N-CH 650V 11A TO247-3
| Part | Rds On (Max) @ Id, Vgs | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | FET Type | Package / Case | Vgs (Max) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 440 mOhm | MOSFET (Metal Oxide) | 64 nC | Through Hole | 650 V | 1200 pF | -55 °C | 150 °C | 10 V | PG-TO247-3-1 | 11 A | 125 W | N-Channel | TO-247-3 | 20 V | 5 V |