S3M V7G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 3A DO214AB

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Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 3A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	S3M V7G

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	10 çA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMC, DO-214AB
Reverse Recovery Time (trr)	1500 ns
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.15 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Current - Reverse Leakage @ Vr	Mounting Type	Speed	Technology	Speed	Reverse Recovery Time (trr)	Supplier Device Package
Taiwan Semiconductor Corporation S3M R7G	150 °C	-55 °C	60 pF	1.15 V	3 A	DO-214AB SMC	1000 V	DO-214AB (SMC)	10 çA	Surface Mount	200 mA 500 ns	Standard
Taiwan Semiconductor Corporation S3MB R5G	150 °C	-55 °C	40 pF	1.15 V	3 A	DO-214AA SMB	1000 V	DO-214AA	10 çA	Surface Mount	200 mA	Standard	Standard Recovery >500ns	1500 ns	SMB
Taiwan Semiconductor Corporation S3M M6G	150 °C	-55 °C	30 pF	1.15 V	3 A	DO-214AB SMC	1000 V	DO-214AB (SMC)	5 µA	Surface Mount	200 mA	Standard	Standard Recovery >500ns	1500 ns
Taiwan Semiconductor Corporation S3M V7G	150 °C	-55 °C	60 pF	1.15 V	3 A	DO-214AB SMC	1000 V	DO-214AB (SMC)	10 çA	Surface Mount	200 mA	Standard	Standard Recovery >500ns	1500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 3A Surface Mount DO-214AB (SMC)

Technical documentation and resources