DIODE GEN PURP 1KV 3A DO214AB
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Capacitance @ Vr, F | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Current - Reverse Leakage @ Vr | Mounting Type | Speed | Technology | Speed | Reverse Recovery Time (trr) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 150 °C | -55 °C | 60 pF | 1.15 V | 3 A | DO-214AB SMC | 1000 V | DO-214AB (SMC) | 10 çA | Surface Mount | 200 mA 500 ns | Standard | |||
Taiwan Semiconductor Corporation | 150 °C | -55 °C | 40 pF | 1.15 V | 3 A | DO-214AA SMB | 1000 V | DO-214AA | 10 çA | Surface Mount | 200 mA | Standard | Standard Recovery >500ns | 1500 ns | SMB |
Taiwan Semiconductor Corporation | 150 °C | -55 °C | 30 pF | 1.15 V | 3 A | DO-214AB SMC | 1000 V | DO-214AB (SMC) | 5 µA | Surface Mount | 200 mA | Standard | Standard Recovery >500ns | 1500 ns | |
Taiwan Semiconductor Corporation | 150 °C | -55 °C | 60 pF | 1.15 V | 3 A | DO-214AB SMC | 1000 V | DO-214AB (SMC) | 10 çA | Surface Mount | 200 mA | Standard | Standard Recovery >500ns | 1500 ns |