BSC070N10LS5ATMA1

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Infineon Technologies

INFINEON'S OPTIMOS™ 5 100 POWER MOSFET IN LOGIC LEVEL FEATURES LOW RDS(ON) IN A SMALL SUPERS08

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BSC070N10LS5ATMA1

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Infineon Technologies

INFINEON'S OPTIMOS™ 5 100 POWER MOSFET IN LOGIC LEVEL FEATURES LOW RDS(ON) IN A SMALL SUPERS08

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSC070N10LS5ATMA1

Current - Continuous Drain (Id) @ 25°C	14 A, 79 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	2700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	83 W, 2.5 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	PG-TDSON-8-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

BSC070 Series

Part	FET Type	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies BSC070N10NS5SCATMA1	N-Channel	MOSFET (Metal Oxide)	3 W 100 W	14 A 82 A	2700 pF	100 V	PG-WSON-8-2	Surface Mount	20 V	3.8 V	38 nC	8-PowerWDFN	7 mOhm	-55 °C	175 ░C	6 V 10 V
Infineon Technologies BSC070N10LS5ATMA1	N-Channel	MOSFET (Metal Oxide)	2.5 W 83 W	14 A 79 A	2700 pF	100 V	PG-TDSON-8-7	Surface Mount	20 V	2.3 V	20 nC	8-PowerTDFN	7 mOhm	-55 °C	150 °C	4.5 V 10 V
Infineon Technologies BSC070N10NS3GATMA1	N-Channel	MOSFET (Metal Oxide)		90 A		100 V	PG-TDSON-8-1	Surface Mount	20 V	3.5 V		8-PowerTDFN	7 mOhm	-55 °C	150 °C	6 V 10 V	114 W	4000 pF	55 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.23
		10	$ 1.68
		25	$ 1.51
		100	$ 1.31
		250	$ 1.20
		500	$ 1.13
		1000	$ 1.07
	Digi-Reel®	1	$ 2.23
		10	$ 1.68
		25	$ 1.51
		100	$ 1.31
		250	$ 1.20
		500	$ 1.13
		1000	$ 1.07
	Tape & Reel (TR)	5000	$ 0.96
		10000	$ 0.92
Newark	Each (Supplied on Cut Tape)	1	$ 2.22
		10	$ 1.59
		25	$ 1.52
		50	$ 1.44
		100	$ 1.36
		250	$ 1.26
		500	$ 1.18
		1000	$ 1.07

Description

General part information

BSC070 Series

ThisOptiMOS™ 5 100V power MOSFET in logic levelreduces switching losses through a low gate charge without compromising conduction losses. The logic level power MOSFET comes in a SuperSO8 package and supports operations at high switching frequencies. In addition, it also provides a low gate threshold voltage which allows the MOSFET to be driven directly from microcontrollers. The OptiMOS™ 5 power MOSFET in logic level is highly suitable forcharger,adapterandtelecomapplications.

Documents

Technical documentation and resources

No documents available