IRF7495TRPBF

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Infineon Technologies

MOSFET, N-CH, 100V, 7.3A, SOIC-8

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Infineon Technologies

MOSFET, N-CH, 100V, 7.3A, SOIC-8

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7495TRPBF

Current - Continuous Drain (Id) @ 25°C	7.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	51 nC
Input Capacitance (Ciss) (Max) @ Vds	1530 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	22 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Vgs(th) (Max) @ Id	Technology
Infineon Technologies IRF7495TRPBF	2.5 W	8-SO	100 V	10 V	51 nC	1530 pF	7.3 A	-55 °C	150 °C	20 V	22 mOhm	N-Channel	8-SOIC	3.9 mm	0.154 in	Surface Mount	4 V	MOSFET (Metal Oxide)

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