Beta
⌘K
MOSFET, N-CH, 100V, 7.3A, SOIC-8
| Part | Power Dissipation (Max) | Supplier Device Package | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Rds On (Max) @ Id, Vgs | FET Type | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Vgs(th) (Max) @ Id | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2.5 W | 8-SO | 100 V | 10 V | 51 nC | 1530 pF | 7.3 A | -55 °C | 150 °C | 20 V | 22 mOhm | N-Channel | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 4 V | MOSFET (Metal Oxide) |