DMTH8008SFG-7
ActiveDiodes Inc
80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
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DMTH8008SFG-7
ActiveDiodes Inc
80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH8008SFG-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 17 A, 68 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 31.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1945 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 50 W, 1.2 W |
| Rds On (Max) @ Id, Vgs | 7 mOhm |
| Supplier Device Package | POWERDI3333-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2000 | $ 0.42 | |
| 6000 | $ 0.40 | |||
| 10000 | $ 0.39 | |||
Description
General part information
DMTH8008SFG Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Documents
Technical documentation and resources