DMTH8008SFG Series

80V +175°C N-Channel Enhancement Mode MOSFET

Catalog

80V +175°C N-Channel Enhancement Mode MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Mounting Type	Vgs (Max)
Diodes Inc DMTH8008SFG-7	31.7 nC	MOSFET (Metal Oxide)	-55 °C	175 ░C	POWERDI3333-8	1945 pF	6 V 10 V	8-PowerVDFN	N-Channel	80 V	7 mOhm	17 A 68 A	1.2 W 50 W	Surface Mount	20 V

Catalog

80V +175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• Low RDS(ON)– Ensures On-State Losses are Minimized

• Excellent Qgd×RDS(ON)Product (FOM)

• Advanced Technology for DC-DC Converters

• Small Form Factor Thermally Efficient Package Enables Higher Density End Products

• Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• An automotive-compliant part is available under separate datasheet (DMTH8008SFGQ)

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.