Specification	CLS01(TE16L,PAS,Q)

Capacitance	530 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage	1 mA
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	125 °C
Operating Temperature - Junction (Min)	-40 °C
Package / Case	L-FLAT™
Package Length	4 mm
Package Name	L-FLAT™
Package Width	5.5 mm
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	30 V
Voltage - Forward (Vf) (Max)	470 mV

CLS01 Series

Part	Voltage - Forward (Vf) (Max)	Operating Temperature - Junction (Min)	Operating Temperature - Junction (Max)	Package Name	Package Length	Package Width	Mounting Type	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Package / Case	Capacitance	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max)	Technology	Current - Reverse Leakage
Toshiba Semiconductor and Storage CLS01(TE16L,PAS,Q)	470 mV	-40 °C	125 °C	L-FLAT™	4 mm	5.5 mm	Surface Mount	500 ns	200 mA	L-FLAT™	530 pF	10 A	30 V	Schottky	1 mA
Toshiba Semiconductor and Storage CLS01(TE16R,Q)	470 mV	-40 °C	125 °C	L-FLAT™	4 mm	5.5 mm	Surface Mount	500 ns	200 mA	L-FLAT™	530 pF	10 A	30 V	Schottky	1 mA
Toshiba Semiconductor and Storage CLS01,LFJFQ(O	470 mV	-40 °C	125 °C	L-FLAT™	4 mm	5.5 mm	Surface Mount	500 ns	200 mA	L-FLAT™	530 pF	10 A	30 V	Schottky	1 mA
Toshiba Semiconductor and Storage CLS01(T6LSONY,Q)	470 mV	-40 °C	125 °C	L-FLAT™	4 mm	5.5 mm	Surface Mount	500 ns	200 mA	L-FLAT™	530 pF	10 A	30 V	Schottky	1 mA

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