DIODE SCHOTTKY 30V 10A L-FLAT
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Capacitance @ Vr, F | Current - Reverse Leakage @ Vr | Package / Case | Current - Average Rectified (Io) | Speed | Technology | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 125 °C | -40 °C | 30 V | 470 mV | Surface Mount | 530 pF | 1 mA | L-FLAT™ | 10 A | 200 mA 500 ns | Schottky | L-FLAT™ (4x5.5) |
Toshiba Semiconductor and Storage | 125 °C | -40 °C | 30 V | 470 mV | Surface Mount | 530 pF | 1 mA | L-FLAT™ | 10 A | 200 mA 500 ns | Schottky | L-FLAT™ (4x5.5) |
Toshiba Semiconductor and Storage | 125 °C | -40 °C | 30 V | 470 mV | Surface Mount | 530 pF | 1 mA | L-FLAT™ | 10 A | 200 mA 500 ns | Schottky | L-FLAT™ (4x5.5) |