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DMT4014LDV-7 - PowerDI3333-8

DMT4014LDV-7

Active
Diodes Inc

40V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMT4014LDV-7 - PowerDI3333-8

DMT4014LDV-7

Active
Diodes Inc

40V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT4014LDV-7
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C8.5 A, 26.5 A
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs11.2 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power - Max [Max]1 W
Rds On (Max) @ Id, Vgs19 mOhm
Supplier Device PackagePowerDI3333-8 (Type UXC)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.28
10$ 0.80
100$ 0.53
500$ 0.41
1000$ 0.37
Digi-Reel® 1$ 1.28
10$ 0.80
100$ 0.53
500$ 0.41
1000$ 0.37
Tape & Reel (TR) 2000$ 0.33
4000$ 0.31
6000$ 0.29
10000$ 0.28

Description

General part information

DMT4014LDV Series

This MOSFET is designed to minimize the on-state resistance(RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.